Method of making a field emission device with silicon-containing

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

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445 50, H01J 902

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061393851

ABSTRACT:
A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors, telecommunications devices, and the like.

REFERENCES:
patent: 5229331 (1993-07-01), Doan et al.
patent: 5259799 (1993-11-01), Doan et al.
patent: 5372973 (1994-12-01), Doan et al.
patent: 5448131 (1998-08-01), Taylor et al.
patent: 5789857 (1998-08-01), Yamaura et al.
Fluckiger et al., "Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD", Mat. Res. Soc. Symp. Proc., vol. 358, pp. 751-756 (1995).
He et al., "Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors,TFTS," Mat. Res. Soc. Symp. Proc.,vol. 345, pp. 53-58 ( 1994).
Mireshghi et al., "Improved Electrical and Transport Characteristics of Amorphous Silicon by Enriching with Microcrystalline Cellulose," Mat. Res. Soc. Symp. Proc., vol. 336, pp. 337-382 (1994).
Shirai, "Surface Morphology and Crystallite Size during Growth of Hydrogenated Microcrystalline Silicon by Plasma-Enhanced Chemical Vapor Deposition," Jpn. J. Appl. Phys. vol. 34, pp. 450-458 (1995).
He et al., "Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors, TFTS," Mat. Res. Soc. Symp. Proc., vol. 336, pp. 25-30 (1994).

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