Method for fabricating phase shifting mask and a phase shifting

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G03F 900

Patent

active

058517081

ABSTRACT:
The method for fabricating a phase-shifting mask includes the steps of providing a substrate having a light shielding layer and a phase-shifting light transmitting layer sequentially formed thereon, first patterning the light shielding layer and the phase-shifting light-transmitting layer to form phase-shifting regions, and oxidizing sidewall portions of the light shielding layer in each phase-shifting region to form phase-shifting light-transmitting sidewall portions. The method further includes the steps of depositing photoresist over the substrate, second patterning the photoresist using the light shielding layer as a mask such that in each phase-shifting region a portion of the phase-shifting light-transmitting layer on the light shielding layer is exposed by removal of the photoresist, and forming a rim phase-shifting layer in each phase-shifting region using the photoresist pattern as a mask. The rim phase-shifting layer includes unexposed portions of the phase-shifting light-transmitting layer and the phase-shifting light transmitting sidewall portions. Then, a half-tone layer in each phase-shifting region is formed using the photoresist pattern as a mask such that a rim phase-shifting layer surrounds each half-tone layer.

REFERENCES:
patent: 5244759 (1993-09-01), Pierrat
patent: 5536606 (1996-07-01), Doan
chou et al.; "Simulation and Fabrication of a New Phase Shifting Mask for 0.35 um contact hole pattern transfer : Halftone-Rim"; SPIE vol. 2087; pp. 380, May 1993.
"0.3-micron optical lithography using a phase-shifting mask," Terasawa et al., SPIE, vol. 1088, Optical/Laser Microlithography (1989), pp. 25-33.
"Improving Resolution in Photolithography with a Phase-Shifting Mask," Levenson et al., IEEE, vol. Ed-29, No. 12, Dec. 1982, pp. 1828-1836.
"New Phase Shifting Mask with Self-aligned Phase Shifters for a Quarter Micron Photolithography," Nitayama et al., IEDM, 1989, pp. 57-60, 3.3.1-3.3.4.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating phase shifting mask and a phase shifting does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating phase shifting mask and a phase shifting , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating phase shifting mask and a phase shifting will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2044991

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.