Process for producing a semiconductor device including an ion im

Metal treatment – Compositions – Heat treating

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29571, 29578, 148187, 357 23, 357 54, 357 91, 427 94, 4272551, 4272554, H01L 21265, H01L 2131

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042669855

ABSTRACT:
Impurity ions implanted into a semiconductor silicon substrate are not redistributed during a heating of the substrate from the substrate to the film. Such redistribution does not occur due to the direct nitridation of the silicon substrate for forming the silicon nitride film.

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patent: 4170502 (1978-10-01), Watakabe
Spielmann et al., "Nitrogen Reactions on Silicon Wafers" I.B.M. Tech. Discl. Bull., vol. 10, No. 3, Aug. 1967, p. 333.

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