Charge-coupled image device

Details Charge-coupled image device Charge-coupled image device

1997-05-14

2000-07-18

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, H01L 27148, H01L 29768

Patent

active

060910917

ABSTRACT:
A CCD image device in which the potential variation of a charge transferring region caused by a CST layer is minimized to enhance the charge transfer efficiency, is disclosed including a plurality of photo-detectors arranged regularly in row and column directions in the surface of a substrate of a first conductivity type; a plurality of charge transferring regions of a second conductivity type formed between the photo-detectors of the row direction; and a channel stop layer formed in the surface of the substrate in order to electrically insulate the respective photo-detectors and the respective charge transferring regions from each other. A CST doping concentration reducing region for decreasing the doping concentration of the channel stop layer is formed at least one in each part to which the neighboring two photo-detectors are adjacent.

REFERENCES:
patent: 4521797 (1985-06-01), Oda
patent: 4935794 (1990-06-01), Miyatake
patent: 5243180 (1993-09-01), Nam
patent: 5286988 (1994-02-01), Nishi
patent: 5313081 (1994-05-01), Yamada
Junichi Hojo et al., "A 1/3-in 510(H).times.492 (V) CCD Image Sensor with Mirror Image Function", IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 954-956.

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