Single crystal semiconductor substrate articles and semiconducto

Details Single crystal semiconductor substrate articles and semiconducto Single crystal semiconductor substrate articles and semiconducto

1988-12-02

1991-04-09

James, Andrew J.

357 15, 357 16, 357 20, 357 22, 357 45, 357 49, 357 56, 357 60, H01L 29161, H01L 2920, H01L 2922, H01L 2924

Patent

active

050069144

ABSTRACT:
A textured substrate is disclosed which is amenable to deposition thereon of epitaxial single crystal films of materials such as diamond, cubic boron nitride, boron phosphide, beta-silicon carbide, and gallium nitride. The textured substrate comprises a base having a generally planar main top surface from which upwardly extends a regular array of posts, the base being formed of single crystal material which is crystallographically compatible with epitaxial single crystal materials to be deposited thereon. The single crystal epitaxial layers are formed on top surfaces of the posts which preferably have a quadrilateral cross-section, e.g., a square cross-section whose sides are from about 0.5 to about 20 micrometers in length, to accommodate the formation of substantially defect-free, single crystal epitaxial layers thereon. The single crystal epitaxial layer may be selectively doped to provide for p-type and p.sup.+ doped regions thereof, to accommodate fabrication of semiconductor devices such as field effect transistors.

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