Stacked type semiconductor device

Details Stacked type semiconductor device Stacked type semiconductor device

1989-11-02

1991-04-09

Hille, Rolf

357 235, 357 4, 357 234, 357 236, H01L 2702, H01L 2968, H01L 2712, H01L 2910

Patent

active

050069136

ABSTRACT:
A field effect transistor is formed as a first semiconductor element on a main surface of a first semiconductor layer (1). An interlayer insulating film (10) constituted by a first insulating layer (101) and a second insulating layer (102) is formed on the first semiconductor element. The first insulating layer (101) is formed of a BPSG film having a glass transition point no higher than 750.degree. C. The second insulating layer (102) is formed of a silicon oxide film having a glass transition point higher than 750.degree. C. and a thickness no less than 2000 .ANG. and no more than 1 .mu.m formed on the first insulating layer (101). A second semiconductor layer (11) is formed on the second insulating layer (102) of the interlayer insulating film (10). The second semiconductor layer (11) is formed to be an island, with the peripheral portions isolated. A field effect transistor as a second semiconductor element is formed in the second semiconductor layer (11). The first insulating layer (101) suppresses stress remained in the second semiconductor layer (11) derived from a difference between coefficient of thermal expansion of the second semiconductor layer (11) and the interlayer insulating film (10). The second insulating layer (102) suppresses lateral distortion generated in the semiconductor layer (11). The characteristics of the second semiconductor element can be improved.

REFERENCES:
Spring Conference of the Japan Society of Applied Physics, 1984, "Experimental Manufacture of Three Dimensional CMOSIC Having SOI Double Layer Structure by Laser Irradiation".
"BPSG Reflow in MOSLSI", Sep. 1987, pp. 150-164.
Applied Physics Letters by Pandya et al., "Large-area defect-free silicon-on-insulator films by zone-melt recrystallization", Mar. 14, 1988, pp. 901-903.
Patent Abstracts of Japan, vol. 7, No. 186 (E-193)[1331], and JF-A-58 090 762 (Mitsubishi Denki).
Thin Solid Films, vol. 154, Nos. 1-2, pp. 249-255, Lausanne, CH, I. H. Cambell et al., "Germanium-on-insulator structures".
IBM Technical Disclosure Bulletin, vol. 27, No. 12, pp. 7263-7264, New York, U.S., "Process for making device quality silicon and silicol dioxide layers for three-dimensional integrated circuits".

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