Semiconductor memory device and method for producing the same

Details Semiconductor memory device and method for producing the same Semiconductor memory device and method for producing the same

1988-07-21

1991-04-09

Hille, Rolf

357 235, 357 51, H01L 2968, H01L 2978, H01L 2702

Patent

active

050069101

ABSTRACT:
A semiconductor memory device having a semiconductor substrate includes; a field oxide layer selectively formed on the semiconductor substrate, and a capacitor including an insulating layer formed on the surface of a trench formed in such a manner that at least an edge portion of the field oxide layer is removed. A conductive layer is formed on the insulating layer, a dielectric layer is formed on the conductive layer and an electrode is formed on the dielectric layer.

REFERENCES:
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4577395 (1986-03-01), Shibata
patent: 4688063 (1987-08-01), Lu et al.
patent: 4792834 (1988-12-01), Uchida
Patents Abstracts of Japan, vol. 8, No. 167, Aug. 2, 1984; & JP-A-59 63 757 (Nippon Denshin Denwa Kosha, Nov. 4, 1984, pp. 271-278.
Patents Abstracts of Japan, vol. 8, No. 70, Apr. 3, 1984; & JP-A-58 220 444 (Tokyo Shibaura Denki K.K.), Dec. 22, 1983, pp. 191-202.
European Search Report, #EP 85-40-2574, The Hague, Oct. 10, 1986.

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