Manufacturing method of a probe head for semiconductor LSI inspe

Details Manufacturing method of a probe head for semiconductor LSI inspe Manufacturing method of a probe head for semiconductor LSI inspe

1991-06-07

1993-03-09

Arbes, Carl J.

Metal working

Method of mechanical manufacture

Electrical device making

29825, 1566591, H05K 302

Patent

active

051917084

ABSTRACT:
The present invention relates to a manufacturing method of a probe head for an inspection apparatus of a semiconductor device represented by an LSI, and more particularly to a manufacturing method suitable for forming probes with high accuracy in forming into multipins at high density, and is characterized in that a structure is obtained, in which a probe forming conductive lower layer is formed on a formed conductive attaching layer for improving attaching strength after forming electrode pads on a wiring substrate, a mask pattern for forming a probe tip forming conductive upper layer is formed at a position corresponding to the probe position is removed by etching in a cylindrical form until the probe forming conductive lower layer is exposed, a probe tip forming conductive upper layer is grown at the position where etching removal has been performed, a mask pattern is removed, a mask pattern which covers a probe tip forming conductive upper layer is formed thereafter at a position corresponding to the probe position, and the probe forming conductive lower layer is removed by etching in a cylindrical form until the conductive attaching layer is exposed, and pin tips are formed as the small probe tip forming conductive upper layer, thus processing into a pin configuration by removing the conductive attaching layer and the mask.

REFERENCES:
patent: 4952272 (1990-08-01), Okino et al.
patent: 5030318 (1991-07-01), Reche
IBM Technical Disclosure Bull vol. 24, No. 7A, Dec. 1981, pp. 3342-3344.

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