Process for producing a semiconductor device capable of planariz

Details Process for producing a semiconductor device capable of planariz Process for producing a semiconductor device capable of planariz

1994-04-28

1996-05-21

Fourson, George

Fishing, trapping, and vermin destroying

437187, 437192, 437195, H01L 21465

Patent

active

055189679

ABSTRACT:
A process of producing a semiconductor device, which includes the steps of: forming an insulating film on a substrate; then etching the insulating film to form an opening through which the substrate is exposed; and then irradiating a metal molecular beam through the opening to deposit a metal film on the substrate, the metal molecular beam being irradiated at an incident angle .theta. within a range of 5 deg .ltoreq..theta..ltoreq.tan.sup.-1 (b/2a) deg ("a" and "b" being the depth and diameter of the opening, respectively) relative to the normal of the substrate.

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patent: 5238525 (1993-08-01), Turner et al.
patent: 5374592 (1994-12-01), MacNaughton et al.

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