Fishing – trapping – and vermin destroying
Patent
1995-08-24
1996-05-21
Quach, T. N.
Fishing, trapping, and vermin destroying
437195, 437238, 437978, H01L 21283
Patent
active
055189598
ABSTRACT:
A method for selectively depositing a silicon oxide insulator spacer layer between multi-layer patterned metal stacks within an integrated circuit. Formed upon a semiconductor substrate is a silicon oxide insulator substrate layer which is formed through a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Upon the silicon oxide insulator substrate layer are formed multi-layer patterned metal stacks. The multi-layer patterned metal stacks have a top barrier metal layer formed from titanium nitride and a lower-lying conductor metal layer formed from an aluminum containing alloy. Formed selectively upon the portions of the silicon oxide insulator substrate layer exposed through the multi-layer patterned metal stacks and upon the edges of the aluminum containing alloy exposed through the multi-layer patterned metal stacks is a silicon oxide insulator spacer layer. The silicon oxide insulator spacer layer is formed through an ozone assisted Chemical Vapor Deposition (CVD) process employing Tetra Ethyl Ortho Silicate as the silicon source material. The silicon oxide insulator spacer layer is formed for a deposition time not exceeding an incubation time for forming the silicon oxide insulator spacer layer upon the top barrier metal layer formed from titanium nitride.
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Chen Lung
Jang Syun-Ming
Wu Lin-June
Yu Chen-Hua
Quach T. N.
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company
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