High power multi-layer semiconductive switching device having mu

Details High power multi-layer semiconductive switching device having mu High power multi-layer semiconductive switching device having mu

1988-06-24

1989-12-05

Hille, Rolf

357 67, 357 79, 357 38, H01L 2354, H01L 2508, H01L 2514

Patent

active

048856304

ABSTRACT:
A large area solid state multi-layer semiconductive switching device having multiple parallel contacts accommodates large magnitudes of currents and provides a uniform and a relatively low voltage drop for each of its multiple parallel contacts. This is provided by a cathode pole piece which is of a semiconductive material such as silicon which matches the silicon semiconductive material and thus the thermal expansion characteristics of the active part of the semiconductive switching device. In addition, a permanent bond is provided between the cathode pole piece and the multiple contacts by providing suitable metallic contact layers and then by the application of heat and pressure.

REFERENCES:
patent: 4127863 (1978-11-01), Kurata
patent: 4176443 (1979-12-01), Iannuzzi et al.
patent: 4246596 (1981-01-01), Iwasaki
patent: 4618877 (1986-10-01), Araki et al.
patent: 4638553 (1987-01-01), Nilarp
patent: 4724475 (1988-02-01), Matsuda

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