Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1989-05-08

1989-12-05

James, Andrew J.

357 40, 357 41, 357 53, 357 71, H01L 2348, H01L 2946, H01L 2962

Patent

active

048856282

ABSTRACT:
A semiconductor integrated circuit device includes a high voltage circuit and a high-speed signal processing circuit on the same chip. The high-speed signal processing circuit is made to have a stacked construction thereby to reduce the power consumption. It is also surrounded by ground potential lines so that it may be prevented from being adversely affected by a high voltage used in the high voltage circuit. Each of the high voltage elements composing the high voltage circuit has its principal surface formed at its base and collector regions with guard ring layers of the same conduction types as the respective ones of the high voltage elements. The guard ring layers extend over the elements and the semiconductor body and have lower impurity concentrations than the respective ones of the elements.

REFERENCES:
patent: 4194214 (1980-03-01), Awane et al.
patent: 4514749 (1985-04-01), Shoji
patent: 4628343 (1986-12-01), Komatsu

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