Fishing – trapping – and vermin destroying
Patent
1995-02-22
1996-05-21
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437 30, 437 35, H01L 218247
Patent
active
055189423
ABSTRACT:
A method of manufacturing a flash EPROM cell is disclosed. A flash EPROM gate stack (114) is formed on p-type silicon substrate (100) having tunnel oxide (102) thereon. The gate stack (114) includes a polysilicon floating gate (106), an intergate dielectric (108), and a control gate (116). The substrate (100) includes a source region (120), a channel (122) and a drain region (118) therebetween. A source implant mask (124) is created that covers at least the drain region (118) and leaves the source region (120) exposed. Large angle ion implantation is used to implant a source dopant into the source region (120) below the floating gate (106) of the gate stack (114). The source implant mask (124) is stripped and the source and drain regions (118 and 120) are doped with a source/drain implant by ion implantation at an implant angle of approximately zero degrees (.about.0.degree.).
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Alliance Semiconductor Corporation
Chaudhari Chandra
Sako Bradley T.
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