Metal-oxide semiconductor (MOS) field effect transistor having e

Details Metal-oxide semiconductor (MOS) field effect transistor having e Metal-oxide semiconductor (MOS) field effect transistor having e

1987-10-21

1989-12-05

James, Andrew J.

357 231, 357 2311, 357 41, 357 42, 357 44, 357 67, 357 71, H01L 2978, H01L 2702, H01L 2348

Patent

active

048856177

ABSTRACT:
A metal-oxide-semiconductor (MOS) field effect transistor comprises monocrystalline, doped silicon zones which are formed between gate electrodes and the field oxide zones by selective epitaxy and which simultaneously serve as diffusion sources for the formation of source and drain zones in the substrate and as terminal zones for silicide source and drain terminals. This terminal technology serves to form particularly planar structures, with a high integration density, which structures are characterized by reduced drain field strength, low series resistances and a small danger of substrate short circuits. Processes for the formation of this structure in CMOS circuits are simple to perform. The present invention can be applied to all NMOS, PMOS and CMOS circuits.

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"Selective Epitaxy for CMOS VLSI" by K. A. Sabine et al, IEEE Electron Device Letters, vol. EDL-6, No. 1, Jan. 1985, pp. 43-46.
"Solid: High-Voltage, High-Gain 300 nm Channel-Length MOSFETS I. Simulation", by Horiuchi et al, Solid State Electronics, vol. 28, No. 5, 1985, pp. 465-472.
"Application of Selective Silicon Epitaxial Growth for CMOS Technology" by S. Nagao et al, LSI R & D Lab, Mitsubishi Electric Corp., IEDM, 1984, pp. 593-596.
"Titanium Disilicide Self-Aligned Source/Drain+Gate Technology" by C. K. Lau et al, VLSI Laboratory/Semiconductor Group CMOS Division, IEEE, 1982, pp. 714-717.

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