Sintered silicon carbide and method for producing the same

Details Sintered silicon carbide and method for producing the same Sintered silicon carbide and method for producing the same

1998-08-21

2000-07-18

Group, Karl

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 92, 252516, C04B 55569

Patent

active

060907339

ABSTRACT:
A sintered silicon carbide containing nitrogen is obtained by sintering a mixture of a powder of silicon carbide and a nonmetallic auxiliary sintering agent. The sintered silicon carbide has a density of 2.9 g/cm.sup.3 or more and contains 150 ppm or more of nitrogen. The sintered silicon carbide preferably has a volume resistivity of 1 .OMEGA..multidot.cm or less and contains .beta.-silicon carbide in an amount of 70% or more of total silicon carbide components. Nitrogen can be introduced into the sintered silicon carbide by adding a nitrogen source, for example, an amine such as hexamethylenetetramine, ammonia, and triethylamine in the production of the powder of silicon carbide which is used as the material powder for producing the sintered silicon carbide or by adding the nitrogen source in combination with the nonmetallic auxiliary sintering agent in the production of the sintered silicon carbide. A high quality sintered silicon carbide having a high density, exhibiting both electric conductivity and high heat conductivity, which can be advantageously used in various fields such as semiconductor industry and electronic information processing instruments industry, is provided.

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