Microwave apparatus for processing semiconductor

Details Microwave apparatus for processing semiconductor Microwave apparatus for processing semiconductor

1986-06-18

1987-07-28

Leung, Philip H.

Electric heating

Metal heating

Of cylinders

219 1055R, 148 15, H05B 680

Patent

active

046833633

ABSTRACT:
Dopants in semiconductor bodies which have been deactivated during processing are reactivated by pulse heating the body to a temperature within the region in which the semiconductor sheet resistivity decreases with increasing anneal temperature. Typically this comprises raising the body to 1000.degree. C. within 40 seconds or less in an inert atmosphere and allowing it to cool immediately or within approximately 30 seconds. The heating is so rapid that diffusion side effects are minimized. Pulse heating may be achieved by means of a sealable microwave heating chamber (1) which can be pressurized or vented as desired and into which microwave energy is directed for a predetermined time. The microwave heating can also be employed for other processing, particularly high pressure oxidation of silicon. '

REFERENCES:
patent: 2480682 (1949-08-01), Stiefel
patent: 3261959 (1966-07-01), Connell et al.
patent: 3276138 (1966-10-01), Fritz
patent: 3551090 (1970-12-01), Brumfield et al.
patent: 3718082 (1973-02-01), Lipoma
patent: 4023004 (1977-05-01), Burke
patent: 4168998 (1979-09-01), Hasegawa et al.
patent: 4433228 (1984-02-01), Nishimatsu et al.
patent: 4517026 (1985-05-01), Inoue

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