Trench gate structure with thick bottom oxide

Fishing – trapping – and vermin destroying

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Details

437 67, H01L 2126, H01L 21283, H01L 29784

Patent

active

049923900

ABSTRACT:
Improved trench gate field effect devices are provided by forming a thick oxide at the bottom of the trench. This thick oxide may be preferably formed by ion implantation into the bottom of the trench.

REFERENCES:
patent: 4430792 (1984-02-01), Temple
patent: 4645564 (1987-02-01), Morie et al.
patent: 4845048 (1989-07-01), Tamaki et al.

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