Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1985-04-11
1987-07-28
Newsome, John H.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 541, 427 86, B05D 306
Patent
active
046831452
ABSTRACT:
A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: ##STR1## wherein l represents 3, 4 or 5; and R represents H or SiH.sub.3 ; ##STR2## wherein R.sup.1 and R.sup.2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11;
REFERENCES:
patent: 4348428 (1982-09-01), Roskley et al.
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4448801 (1984-05-01), Fukuda et al.
Eguchi Ken
Haruta Masahiro
Hirai Yutaka
Matsuda Hiroshi
Nakagiri Takashi
Canon Kabushiki Kaisha
Newsome John H.
LandOfFree
Method for forming deposited film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming deposited film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming deposited film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2034370