Plasma assited MO-CVD of perooskite dalectric films

Details Plasma assited MO-CVD of perooskite dalectric films Plasma assited MO-CVD of perooskite dalectric films

1989-12-06

1991-04-09

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 47, 4272553, 4271263, 427314, B05D 306, B05D 314

Patent

active

050063634

ABSTRACT:
Disclosed is a method of forming a Perovskite-type dielectric film on a substrate under low temperature by decomposing and reacting vapor of organometallic compound containing metal for the dielectric, vapor of organometallic compound containing titanium, and oxygen in a reduced-pressure and plasma.

REFERENCES:
patent: 4717584 (1988-01-01), Aoki et al.
Berg et al., "Fractional Sublimation of Various Metal Chelates of Dipivaloylmethane" Anal. Chim. Acta 60 P117-125 (1972).
Prakash "Thin Film Studies of Oxides by the Organometallic-CVD Technique" Prog. Crystal. Growth and Charact. 1983 vol. 6 pp. 371-391.
C. Feldman, Rev. Sci. Inst., 26, 463 (1955).
A. E. Feuersanger et al., J. Electrochem. Soc., 111, 1387 (1964).
T. L. Rose et al., J. Appl. Phys., 55, 3706 (1984).
M. Okuyama et al., Jpn. J. Appl. Phys. 22, Suppl. 21-1, 465 (1983).
R. Takayama et al., Jpn. J. Appl. Phys., 61, 411 (1987).
M. Okada et al., J. Ceram. Soc. Jpn., 96, 687 (1988).
E. Fujii et al., J. Magn. Soc. Jpn., 12, 2, 339 (1988).

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