Method of single step damascene process for deposition and globa

Details Method of single step damascene process for deposition and globa Method of single step damascene process for deposition and globa

1999-08-02

2000-07-18

Utech, Benjamin L.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

451 67, 451 73, 451287, 451290, C23F 102

Patent

active

060902396

ABSTRACT:
A modified chemical-mechanical polishing apparatus is described. The apparatus includes: (i) a polishing pad 104 providing a surface against which a surface of an integrated circuit substrate 116 is polished; (ii) an anode 103 on which the polishing pad is secured, the anode including an electrolyzable conductive material; and (iii) a voltage source 106 electrically connecting the anode to the integrated circuit substrate in such a way that when a voltage is applied from the voltage source in the presence of slurry 114 admixed with an electrolyte composition on the polishing pad, an electrolytic cell results in which the conductive material deposits on the surface of the integrated circuit substrate. A process of depositing a conductive material on and polishing a surface of an integrated circuit substrate simultaneously is also described.

REFERENCES:
patent: 5723387 (1998-03-01), Chen
patent: 5807165 (1998-09-01), Uzoh et al.
patent: 5911619 (1999-06-01), Uzoh et al.
Morand et al., "Copper Integration in Self Aligned Dual Damascene Architecture", 1997, Symposium on VLSI Technology Digest of Technical Papers, pp. 31-32.
Tsuchiya et al., "Ultra-Low Resistance Direct Contact Cu Via Technology Using In-Situ Chemical Vapor Cleaning", 1997, Symposium on VLSI Technology Digest of Technical Papers, pp. 59-60.

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