Piston-activated crystal-growing apparatus

Details Piston-activated crystal-growing apparatus Piston-activated crystal-growing apparatus

1998-04-02

2000-07-18

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117 81, 117 83, 117206, C30B 3500

Patent

active

060902019

ABSTRACT:
A piston-activated crystal-growing apparatus includes a crucible for containing a seed and a solidifiable liquid covering the seed. In operation, thermal gradient is established in the crucible, and a piston moves within the crucible in the direction of the crystal.

REFERENCES:
patent: 4167554 (1979-09-01), Fisher
Patent Abstracts of Japan vol. 15, No. 456 (C-886), 20, Nov. 1991, and Japan 03 193689 A (Hitachi Cable Ltd), Aug. 23, 1991.
Patent Abstracts of Japan vol. 12, No. 316 (C-524), Aug. 26, 1988, and Japan 63 085082 A (Nippon Telegraph and Telephone Corporation).
WO 91 02832 A (Ostrogorsky).
Journal of Crystal Growth, vol. 137, 1994, Amsterdam NL, pp. 64-71, XPOOO480880, Ostrogorsky et al.: "Normal and Zone Solidification Using the Submerged Heater Method".
"Material Synthesis and Crystal Growth of HTC Ceramics and Single Crystals Under High Pressure"; Morawski, et al; Appl. Supercond. (1993), 1(3-6), pp. 599-606. (Abstract only 1993.

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