Method for fabrication of self-aligned asymmetric field effect t

Details Method for fabrication of self-aligned asymmetric field effect t Method for fabrication of self-aligned asymmetric field effect t

1990-03-20

1991-02-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 44, 437 29, 437984, 437912, H01L 21306, H01L 2122

Patent

active

049923870

ABSTRACT:
A method for fabrication of a field effect transistor includes forming an insulator film of a proper thickness at a predetermined region on one principal surface of a compound semiconductor substrate, forming a gate electrode of a refractory metal on a side wall of the insulator film in a self-alignment manner, and implanting ions with a mask of the insulator film and the gate electrode to form ion implanted regions in the substrate asymmetrically with respect to the gate electrode.

REFERENCES:
patent: 4287660 (1987-09-01), Nicholas
patent: 4597827 (1986-07-01), Nishitani et al.
IBM Tech. Disclosure Bull., vol. 30, #3, Aug. 1987, p. 1136.
"A High Performance LDD GaAs MESFET with a Refractory Metal Gate", by Shuji Asai, et al., in Extended Abstract of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 383-386.
"A New Refractory Self-Aligned Gate Technology for GaAs Microwave Power FET's and MMIC's", by Arthur E. Geissberger, ICCC Transactions on Electron Devices, vol. 35, No. 5, May 1988, pp. 615-622.

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