Fishing – trapping – and vermin destroying
Patent
1989-09-27
1991-02-12
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 5, 437149, 437154, H01L 3118
Patent
active
049923862
ABSTRACT:
A semiconductor light detector includes a first semiconductor layer of a first conductivity type having a multi-layer structure including a light absorbing layer and an avalanche multiplicating layer, an annular second semiconductor layer formed on the first semiconductor layer, a light detecting region formed by doping an impurity of a second conductivity type in a surface region of the first semiconductor layer, in such a manner that a peripheral portion of the light detecting region is located outside an inner periphery of the second semiconductor layer, the light deflecting region defining a first p-n junction in combination with the first semiconductor layer, and a guard ring formed by doping an impurity of the second conductivity type in a surface region of the second semiconductor layer to surround the peripheral portion of the light receiving region with the first semiconductor layer, the second p-n junction having a concentration gradient lower than that of the first p-n junction. By virtue of the presence of the second semiconductor layer, the junction depth of the peripheral portion of the light detecting region is less than that of the central portion of the light detecting region, and the junction depth of the guard ring is greater than that of the peripheral portion of the light detecting region. As a result, a sufficient guard ring effect can be obtained without a guard ring having a great junction depth.
REFERENCES:
patent: 4761383 (1988-08-01), Matsushima et al.
patent: 4840916 (1989-06-01), Yasuda et al.
K. Taguchi et al., The Japan Society of Applied Physics, Extended Abstracts (The 46th Autumn Meeting, 1985), Oct. 1, 1985.
K. Nagatsuma et al., The Institute of Electronics, Information and Communication Engineers, 1988 Autumn National Convention Record, Aug. 15, 1988.
Furuyama Hideto
Sadamasa Tetsuo
Chaudhari Chandra
Hearn Brian E.
Kabushiki Kaisha Toshiba
LandOfFree
Method of manufacturing a semiconductor light detector does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor light detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor light detector will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-20310