Low temperature process for depositing an oxide dielectric layer

Details Low temperature process for depositing an oxide dielectric layer Low temperature process for depositing an oxide dielectric layer

1981-09-24

1983-12-06

Dixon, Jr., William R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 79, 427 93, 427 95, 4272553, B05D 512, C23C 1100, B32B 904

Patent

active

044193858

ABSTRACT:
The specification discloses a low temperature process for forming an effective insulating layer of a selected oxide on the surface of a chosen conductive substrate. The oxide so formed has low pinhole density, good surface morphology, and good step coverage. In addition, the disclosed process simultaneously minimizes the deformation or restructuring of the surface of a temperature-sensitive conductive substrate, which would produce unwanted hillocks or spikes that degrade the insulating properties of the oxide. In accordance with the disclosed process, the substrate is exposed to a chosen vapor phase reactant in the presence of neutral, charge-free atomic oxygen to produce a reaction between the atomic oxygen and the vapor phase reactant to form the selected oxide, which deposits on the surface of the conductive substrate. Improved multilayer structures comprising multiple layers of conductive material separated by an oxide dielectric layer are formed by the disclosed process.

REFERENCES:
patent: 4239811 (1980-12-01), Kenlage
patent: 4239835 (1980-12-01), Iijima et al.
patent: 4359490 (1982-11-01), Lehrer
patent: 4363868 (1982-12-01), Takasaki et al.
Rhodes, Semiconductor International Mar. 1981, pp. 65, 66, 68 & 70.
Sarkozy, Digest of Symposium Papers, 1981 Symposium on VLSI Technology, 1981.

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