Semiconductor integrated circuit device, method for producing th

Fishing – trapping – and vermin destroying

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148DIG83, 2504922, 31511181, H01L 21265

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active

052448207

ABSTRACT:
The present invention relates to an ion implantation process in a wafer process for a semiconductor integrated circuit device. Particularly, according to the present invention, a shallow junction can be formed by performing the implantation of ion while holding a wafer to be processed at a low temperature.

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M. Salomi et al., "A Side-Entry Liquid Hi Cooled Stage . . . " Journal of Physics E: Sci. Instrum., vol. 18, No. 4, pp. 331-333, Apr. 1985.
E. Bayer et al., "Cryo-Panel/Heat Absorber to Enhance Wafer Cooling . . . " IBM Tech. Disc. Bulletin, vol. 23, No. 10, pp. 4504-4505, Mar. 1981.
S. Wolf et al., Silicon Processing for the VLSI Era: vol. 1, Lattice Press, Sunset Beach, pp. 295-308 (1986).

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