Single-alignment-level lithographic technique for achieving self

Details Single-alignment-level lithographic technique for achieving self Single-alignment-level lithographic technique for achieving self

1992-09-11

1993-09-14

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430312, 430316, 430323, 430396, 430942, G03F 726, G03F 900

Patent

active

052447596

ABSTRACT:
A phase-shifting lithographic mask is made by a procedure involving only a single patterned electron, ion, or photon bombardment of a resist layer. The bombardment is arranged to produce three regions in the resist containing mutually different bombardment doses per unit area, one of which is typically zero. These three regions are then used--in conjunction with separate wet development steps with two developers of different concentrations--in order to pattern the resist layer and to from an underlying double layer consisting of a patterned opaque layer located on a differently patterned transparent phase-shifting layer, the transparent phase-shifting layer being located on, or being part of, a transparent substrate.

REFERENCES:
patent: 3930857 (1976-01-01), Bendz
patent: 4035522 (1977-07-01), Hatzakis
patent: 4738907 (1988-04-01), Shigetomi et al.
patent: 4751170 (1988-06-01), Mimura et al.
patent: 4772539 (1988-09-01), Gillespie
patent: 4985374 (1991-01-01), Tsuji et al.
Hinsberg, W. D. et al., "A Lithographic Analog of Color Photography: Self-Aligning Photolithography Using a Resist with Wavelength-Dependent Tone," J. of Imaging Science, vol. 33 (1989 Jul./Aug.) No. 4, Springfield, Va., pp. 129-135.
Flagello, D. et al., "A Single Expose Double Develop (SEDD) Process for Self-Aligned Lithographic Applications," 8226 Microelectronic Engineering, 9 (1989) May, pp. 47-52.
Colbran, W. V. et al., "Hitachi E-Beam Lithography Tools for Advanced Applications," SPIE, vol. 1496, 10th Annual Symposium on Microlithography, (1990).
Nitayama, A. et al., "New Phase Shifting Mask with Self-Aligned Phase Shifters for a Quarter Micron Lithography", International Electron Device Meeting (IEDM) Technical Digest, pp. 57-60 (3.3.1-3.3.4) Dec. 1989.
Levenson, M. D. et al., "Improved Resolution in Photolithography with a Phase-Shifting Mask," IEEE Transactions on Electron Devices, vol. ED-29, pp. 1828-1836 (1982).
Terasawa, T. et al., "0.3 um Optical Lithography Using Phase-Shifting Mask," SPIE, vol. 1088, Optical/Laser Microlithography 11 (1989), pp. 25-33.

Affiliated with

Also associated with

Rating

Single-alignment-level lithographic technique for achieving self does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single-alignment-level lithographic technique for achieving self, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single-alignment-level lithographic technique for achieving self will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2025562