Etching a substrate: processes – Gas phase etching of substrate
Patent
1997-04-22
1998-07-28
Turner, Archene
Etching a substrate: processes
Gas phase etching of substrate
216 95, 427307, 427322, 427536, 427577, 427596, 4272481, 427249, 4272553, 4272556, 4272557, 4274071, 427410, 4274191, 4274195, 4274197, 427444, B05D 300
Patent
active
057858764
ABSTRACT:
A layer construction with an organic layer and a transparent cover layer which covers the organic layer and which is harder than the organic layer, and a process for producing such a layer construction in which the cover layer is deposited on the surface of the organic layer from a precursor material present in the gas phase. In order to improve the optical quality of the layer construction, the cover layer, at least in a transition region between the organic layer and the cover layer, is deposited with an index of refraction which differs by a maximum of 20%, in particular by a maximum of 10%, from the index of refraction of the underlying organic layer.
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Fuesser Hans-Juergen
Hartweg Martin
Holdik Karl
Rohwer Klaus
Daimler-Benz AG
Turner Archene
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