Nonvolatile magnetic analog memory

Details Nonvolatile magnetic analog memory Nonvolatile magnetic analog memory

1994-04-08

1996-04-02

Fears, Terrell W.

Static information storage and retrieval

Analog storage systems

Magnetic

365 66, 365135, G11C 1300

Patent

active

055046991

ABSTRACT:
A nonvolatile analog magnetic memory includes a substrate comprised of saturable and desaturable magnetic domains at distinguishable fixed locations, a bi-directional drive circuit to selectively write data to the magnetic domains by first saturating a selected magnetic domain with current flowing in one direction, followed by desaturating the magnetic domain with current flowing in the reverse direction of the saturating current, lowering the magnetic flux density to a level corresponding to the magnitude of an analog input electrical signal within a range of magnetic flux density levels between a zero point and a full scale point, sensors and a sensor select circuit to select a magnetic domain and nondestructively respond to the magnitude of the magnetic flux for the chosen magnetic domain, producing an electrical output signal corresponding to the magnetic flux for the chosen magnetic domain. A second embodiment includes a rotatable substrate, a bi-directional drive circuit on a read/write head sensor and a sensor select circuit. In both embodiments superconductive materials can be incorporated into the magnetic domain material, the bi-directional drive circuit, and sensors and sensor select circuitry. All components of the nonvolatile analog magnetic memory can be formed through photo-lithographic techniques, sputtering, and machine, electromechanical, or manual assembly. Cells of magnetic domain material can be arranged in both serial and parallel form for analog nonvolatile writing and reading.

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