Semiconductor read only memory

Static information storage and retrieval – Read only systems – Semiconductive

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Details

365 51, G11C 1300, G11C 1140

Patent

active

052688615

ABSTRACT:
A semiconductor read only memory with hierarchical bit lines in which a resistance against a discharge current is constant irrespective of the position of a memory cell from which information is to be read is disclosed. A bank selecting MOSFET is connected to one end portion of a sub-bit line. Another bank selecting MOSFET is connected to the other end portion of the adjacent sub-bit line. Bank selecting MOSFETs are connected in the same alternate manner as described above. Therefore, since the resistance on bit lines against the read-out current is constant, a larger read-out current can be used especially when diffusion bit lines are used, whereby the semiconductor read only memory of the invention can achieve a high-speed read operation.

REFERENCES:
patent: 5050125 (1991-09-01), Momodomi et al.

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