Method of manufacturing semiconductor device

Metal working – Method of mechanical manufacture – Electrical device making

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Details

29591, 357 52, H01L 2192

Patent

active

043410111

ABSTRACT:
A method of manufacturing a semiconductor device comprising preparing a semiconductor substrate which includes at least three semiconductor layers of alternately different conductivity types and in which one of the semiconductor layers is divided into a plurality of respectively independent regions on each of which an electrode film is provided. When one of the regions of the semiconductor layer is found defective, a substantial portion of the electrode film provided on the defective region is removed by trimming to lower the surface level of the electrode film relative to the others.

REFERENCES:
patent: 3303400 (1967-02-01), Allison
patent: 3543102 (1970-11-01), Dahlberg et al.

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