Metal working – Method of mechanical manufacture – Electrical device making
Patent
1980-10-03
1982-07-27
Walton, Donald L.
Metal working
Method of mechanical manufacture
Electrical device making
29591, 357 52, H01L 2192
Patent
active
043410111
ABSTRACT:
A method of manufacturing a semiconductor device comprising preparing a semiconductor substrate which includes at least three semiconductor layers of alternately different conductivity types and in which one of the semiconductor layers is divided into a plurality of respectively independent regions on each of which an electrode film is provided. When one of the regions of the semiconductor layer is found defective, a substantial portion of the electrode film provided on the defective region is removed by trimming to lower the surface level of the electrode film relative to the others.
REFERENCES:
patent: 3303400 (1967-02-01), Allison
patent: 3543102 (1970-11-01), Dahlberg et al.
Homma Hideo
Okano Sadao
Hitachi , Ltd.
Walton Donald L.
LandOfFree
Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2020193