Sense amplifier circuit in a flash memory device

Details Sense amplifier circuit in a flash memory device Sense amplifier circuit in a flash memory device

1999-03-25

2000-10-03

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

3651852, 36518533, G11C 1606

Patent

active

061282278

ABSTRACT:
The present invention discloses a sense amplifier circuit for reading-out information stored in a memory cell, include in a flash memory device having a main cell array in which a plurality of memory cells are connected between a plurality of word lines and a plurality of bit lines comprises an auxiliary cell array in which a plurality of memory cells are connected between a plurality of word lines and a bit line, a reference cell connected between a source voltage and the ground and in which a drain thereof is connected to a common source line of the auxiliary cell array, and a sense amplifier the input terminals of which are connected to the common source line of the auxiliary cell array and the bit line of the main cell array, respectively.

REFERENCES:
patent: 4639895 (1987-01-01), Iwahashi et al.
patent: 5168466 (1992-12-01), Kuo et al.
patent: 5276644 (1994-01-01), Pascucci et al.
patent: 5528543 (1996-06-01), Stiegler
patent: 5615154 (1997-03-01), Yamada
patent: 5642310 (1997-06-01), Song
patent: 5675537 (1997-10-01), Bill et al.
patent: 5684739 (1997-11-01), Takeuchi
patent: 5717640 (1998-02-01), Hashimoto

Affiliated with

Also associated with

Rating

Sense amplifier circuit in a flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense amplifier circuit in a flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense amplifier circuit in a flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-201886