Method for isolating semiconductor device

Details Method for isolating semiconductor device Method for isolating semiconductor device

1996-09-25

1997-12-30

Dang, Trung

Fishing, trapping, and vermin destroying

437184, 437 89, 437104, H01L 21302

Patent

active

057029750

ABSTRACT:
A method for isolating a semiconductor device is disclosed including the steps of sequentially growing a plurality of material layers on a semiconductor substrate, etching the material layers down to a predetermined depth of the substrate to thereby define an active region, forming a semi-insulating film on the exposed semiconductor substrate in order to planarize the step-difference of the active region and the isolation region, and then, forming an ohmic metal layer on a space where the semi-insulating film is regrown.

REFERENCES:
patent: 4954457 (1990-09-01), Jambotkar
patent: 5254492 (1993-10-01), Tserng et al.
patent: 5272106 (1993-12-01), Hirtz et al.
patent: 5629215 (1997-05-01), Goronkin et al.
Characterization of Device Isolation in GaAs MESFET Circuits by Boron Implantation; F. Clauwaert, P. Van Daele, R. Baets, and P. Lagasse; Mar. 1987; pp. 711-714.
Elimination of Mesa-Sidewall Gate Leakage in InAlAs/InGaAs Heterostructures by Selective Sidewall Recessing; Sandeep R. Bahl and Jesus A. del Alamo; Apr. 1992; pp. 195-197.

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