Semiconductor ceramic device having a ceramic element with negat

Details Semiconductor ceramic device having a ceramic element with negat Semiconductor ceramic device having a ceramic element with negat

1994-07-15

1996-04-02

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257704, 257705, 257712, 257745, H01L 2348, H01C 710

Patent

active

055043712

ABSTRACT:
A ceramic element is formed by a rare earth and transition element oxide such as LaCoO.sub.3. The ceramic element is substantially isolated from the atmosphere by a case base, a case, etc.

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Bhide, et al., Physical Review B, "Mossbauer Studies of the High-Spin-Low-Spin Equilibria and the Localized-Collective Electron Transition in LaCoO.sub.3 ", vol. 6, No. 3, Aug. 1, 1972.

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