Solid state image sensor device having two layer wiring structur

Details Solid state image sensor device having two layer wiring structur Solid state image sensor device having two layer wiring structur

1994-10-07

1996-04-02

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257232, 257229, 257630, 257435, H01L 27148, H01L 2358

Patent

active

055043550

ABSTRACT:
A solid state image sensor device having an effective light detecting element and a peripheral circuit includes a light-shielding film for shielding a periphery of the effective light detecting element, a first wiring film made of the same material as that of the light-shielding film and formed in the same process as that for the light-shielding film, and a second wiring film of aluminum for the peripheral circuit. The first wiring film and the second wiring film form a two layer wiring structure of the peripheral circuit and are electrically interconnected through contact holes in an interlayer insulating film. With this arrangement, it is possible to lower the wiring resistance for the peripheral circuit and also to cause a signal transfer clock pulse of high-frequency to propagate without its waveform becoming dull.

REFERENCES:
patent: 4717945 (1988-01-01), Yusa et al.
patent: 4789888 (1988-12-01), Miyata et al.
patent: 4910568 (1990-03-01), Takei et al.
patent: 4943839 (1990-07-01), Kumano et al.
patent: 4980735 (1990-12-01), Yamawaki
patent: 5132762 (1992-07-01), Yamada
patent: 5336919 (1994-08-01), Toriyama

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