Fishing – trapping – and vermin destroying
Patent
1996-10-30
1997-12-30
Dutton, Brian
Fishing, trapping, and vermin destroying
437187, 437200, 437203, 437911, H01L 21265, H01L 2144, H01L 2148
Patent
active
057029628
ABSTRACT:
A semiconductor device, by which a base in which gates are buried can be formed by the junction of semiconductor substrates to each other at a lower temperature, and a fabrication process thereof are provided. Recesses are defined in the top of an N.sup.- substrate. A P.sup.+ layer is formed on the underside of the N.sup.- substrate. P.sup.+ -Gate regions are each formed in an area ranging from the bottom to lower side portions of the recesses. A metal layer composed of an Au-Sb alloy is formed on the underside of the N.sup.+ substrate. The N.sup.- substrate and the N.sup.+ substrate are subjected to a treatment for removing impurities thereon with an aqueous solution of sulfuric acid and hydrogen peroxide, washed with purified water and dried by a spin dryer. The N.sup.- substrate and the N.sup.+ substrate are heated at about 350.degree. C. in a hydrogen atmosphere in a state that the tops of the projections between the recesses have been brought into contact with the metal layer provided on the underside of the N.sup.+ substrate, whereby the N.sup.- substrate and the N.sup.+ substrate are joined to each other.
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