Method of making buried metallization structure

Details Method of making buried metallization structure Method of making buried metallization structure

1996-09-20

1997-12-30

Niebling, John

Fishing, trapping, and vermin destroying

437194, H01L 21265

Patent

active

057029571

ABSTRACT:
Disclosed is an IC structure providing conductive lines for routing within a semiconductor substrate immediately below the level of the active IC devices. These "buried" conductive lines are insulated from each other by dielectric regions formed as an insulating plane immediately below the active devices and resembling a conventional silicon on insulator (SOI) structure. Within this plane, however, the buried conductive lines provide routes between various active device elements to form some circuit connections such as intracell connections for a gate array. Thus, the buried conductive lines replace some routing from the metallization/dielectric layer stack on top of the active region.

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