Voltage-driven type semiconductor device

Details Voltage-driven type semiconductor device Voltage-driven type semiconductor device

1993-11-17

1996-11-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Five or more layer unidirectional structure

257139, 257212, 257378, H01L 2974, H01L 31111

Patent

active

055720480

ABSTRACT:
According to the present invention, a MOSFET is formed of an n source, a p well, an n drain and a MOS gate electrode, a bipolar transistor is formed of an n emitter, a p base and an n collector formed in sequential order adjacent to the n drain. These transistors are formed by being merged with each other by the contact of n drain and the n emitter of the same conductivity type. Holes are injected into the drain of a voltage-driven type transistor comprised of the MOSFET from the bipolar transistor having a very small collector saturation resistance. With this, it is possible to give rise to conductivity modulation in the drain of the MOSFET, while the power dissipation of the voltage-driven type semiconductor device becomes very small.

REFERENCES:
patent: 4821095 (1989-04-01), Temple
Temple, "MOS-Controlled Thyristors-A New Class of Power Devices", IEEE, 1986.
Ishidoh et al., "Advanced High Frequency GTO", Proceedings of 1988 Int'l Symposium on Power Semiconductor Devices, Tokyo, pp. 189-194.
Ajit, J. S., et al. "The Minority Carrier Injection Controlled Field-Effect Transistor . . . " IEEE Trans. on Elec. Dev., vol. 39, No. 8, Aug. 1992, pp. 1954-1958.

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