Monocrystalline semiconductor commutator with grain boundry

Details Monocrystalline semiconductor commutator with grain boundry Monocrystalline semiconductor commutator with grain boundry

1995-06-06

1996-11-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

257 51, 257 64, 257 65, 257603, 257610, H01L 2904, H01L 31036

Patent

active

055720447

ABSTRACT:
A semiconductor commutator which is constructed by joining a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type, wherein there is provided a grain boundary which is located near a junction surface of the semiconductor region of the first conductivity type and the semiconductor region of the second conductivity type so as not to cross said junction surface.

REFERENCES:
patent: 3518503 (1970-06-01), Doo
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 4062038 (1977-12-01), Cuomo et al.
patent: 4178197 (1979-12-01), Marinance
patent: 4259683 (1981-03-01), Adler et al.
patent: 4626883 (1986-12-01), Kash et al.
patent: 4646427 (1987-03-01), Doyle
patent: 5034782 (1991-07-01), Koizumi et al.

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