Semiconductor integrated circuit device having protective transi

Details Semiconductor integrated circuit device having protective transi Semiconductor integrated circuit device having protective transi

1998-10-15

2000-10-03

Ballato, Josie

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 56, 257356, 257358, H02H 322

Patent

active

061281735

ABSTRACT:
A semiconductor integrated circuit device includes a first protection circuit for protecting against static charge applied to a signal terminal, a second protection circuit for protecting against static charge applied between a power supply terminal and a ground terminal, and a main circuit protected from the static charge by the first and second protection circuits. The second protection circuit discharges the static charge through a break-down of p-n junctions of the component transistors or punch-through. The main circuit has a field effect transistor having a gate insulating layer, to which is applied the potential difference between the power supply line and the ground line, and having a break-down voltage higher than the break-down voltage of the p-n junction or the punch-through voltage of the second protection circuit, whereby the second protection circuit is effective against the static charge.

REFERENCES:
patent: 4115709 (1978-09-01), Inoue et al.
patent: 4725915 (1988-02-01), Jwahashi et al.
patent: 4760433 (1988-07-01), Young et al.
patent: 5610425 (1997-03-01), Quigley et al.
patent: 5610790 (1997-03-01), Staab et al.
patent: 5917689 (1999-06-01), English et al.

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