Method of forming optimized thin film metal interconnects in int

Details Method of forming optimized thin film metal interconnects in int Method of forming optimized thin film metal interconnects in int

1993-07-29

1996-04-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 50, 437195, 437194, H01L 2144, H01L 2148

Patent

active

055040373

ABSTRACT:
A method for forming optimized film metal interconnects employed in integrated circuit structures have a width, L, and a spatial separation or spacing, S, according to the following characteristics: interconnect width, L.gtoreq.0.1 mm; interconnect spatial separation, S.gtoreq.0.2 .mu.m, interconnect thickness, T.sub.A1 .ltoreq.2L mm; and interlayer insulating film thickness, T.sub.I .ltoreq.2L min. More particularly, the layout is characterized by having the ranges of 0.1.ltoreq.L.ltoreq.0.8 mm and 0.2 mm.ltoreq.S.ltoreq.1 mm. As a result, IC signal switching speed is optimized for IC's designed in the sub-micron integration scale regime.

REFERENCES:
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patent: 4803181 (1989-02-01), Buchmann et al.
patent: 4931410 (1990-06-01), Tokunaga et al.
patent: 5262672 (1993-11-01), Iranmanesh

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