Method of making a semiconductor memory device having a floating

Fishing – trapping – and vermin destroying

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437977, 148DIG138, H01L 218247

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active

055040225

ABSTRACT:
A method of forming a non-volatile semiconductor memory device includes the steps of forming a generally periodical undulation on a surface of a silicon substrate with a pitch of 1-20 nm, by cleaning the surface of the substrate by a cleaning solution to form a native silicon oxide film that covers the surface of the silicon substrate with a thickness that changes generally periodically, followed by a selective etching process applied to the native silicon oxide film thus formed to expose the surface of the silicon substrate, and forming a tunneling oxide film on the undulated surface of the substrate by applying a thermal oxidation such that the tunneling oxide film has a thickness that changes generally periodically with a pitch of 1-20 nm.

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Ghandhi, Sorab K., "VLSI Fabrication Principles", pp. 479-482, 522, 1983.

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