Fishing – trapping – and vermin destroying
Patent
1995-06-14
1996-04-02
Fourson, George
Fishing, trapping, and vermin destroying
437 89, 437 90, 437131, 437162, 148DIG10, 148DIG11, 148DIG124, 257587, 257592, 257593, H01L 21265
Patent
active
055040187
ABSTRACT:
A bipolar transistor has a base rink structure epitaxially grown from an overhang portion of a poly-crystal silicon base electrode and an epitaxial collector layer and an intrinsic base structure grown on a concave central portion of the base rink structure after a diffusion stage of a dopant impurity into the base rink structure, and the intrinsic base structure is electrically connected through a buried collector region passing through the concave central portion into an epitaxial collector layer, thereby maintaining the dopant impurity profile in the intrinsic base structure without deterioration of transistor characteristics.
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Fourson George
NEC Corporation
Pham Long
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