Epitaxial compositions

Fishing – trapping – and vermin destroying

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Details

437126, 437132, 156610, 156613, H01L 2120

Patent

active

052683273

ABSTRACT:
A method for manufacturing, by chemical depostion from the vapor phase, epitaxial composites comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium alluminum arsenide (GaAlAs) on single crystal silicon substrates.

REFERENCES:
patent: 3488542 (1970-01-01), Lehrer et al.
patent: 3541678 (1970-11-01), McDonald
patent: 3575628 (1971-04-01), Word
patent: 4588451 (1986-05-01), Vernon
Manasevilt, "Recollections and Reflections of MOCVD", Jr-Cyrl. Growth, 55 (1981), 1-9.

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