Fishing – trapping – and vermin destroying
Patent
1991-10-15
1993-12-07
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 49, 257320, H01L 2160
Patent
active
052683192
ABSTRACT:
Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of manufacture provide self-alignment of the elements. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides a memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.
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Masuoka et al., "A New Flash E2PROM Cell Using Triple Polysilicon Technology," IEDM, 84, pp. 464-467, (1984).
Kim, "A Very Small Schottky Barrier Diode (SBD) With Self-Aligned Guard Ring For VLSI Applications," IEDM Technical Digest, 1979, pp. 49-53.
Booth Richard A.
Chaudhuri Olik
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