Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1994-03-17
1996-04-02
Owens, Terry J.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272552, C23C 1652
Patent
active
055038751
ABSTRACT:
A film is formed on a substrate by supplying a plurality of processing gases into a processing container and forming the film on the substrate from the processing gases while exhausting a portion of the gases out of the processing container. Before a partial pressure of a byproduct in the processing container produced through chemical reaction of the processing gases reaches an equilibrium state, the partial pressure of the byproduct in the processing container is temporarily reduced by temporarily suppressing or stopping the supply of at least one of the processing gases into the processing container and exhausting gas from the processing container.
REFERENCES:
patent: 4279947 (1981-07-01), Goldman et al.
patent: 4395438 (1983-07-01), Chiang
patent: 4699825 (1987-10-01), Sakai et al.
patent: 4992299 (1991-02-01), Hochberg et al.
patent: 5037775 (1991-08-01), Reisman
patent: 5201995 (1993-04-01), Reisman et al.
patent: 5308655 (1994-05-01), Eichman et al.
Ohtsuka, N. et al. "A New GaAs on Si Structure Using ALAs Buffer Layers Grown by Atomic Layer Epitaxy"; Journal of Crystal Growth 99 (1990) Jan. Nos. 1/4 pp. 346-353.
Imai Masayuki
Nishimura Toshiharu
Owens Terry J.
Tokyo Electron Limited
Tokyo Electron Tohoku Limited
LandOfFree
Film forming method wherein a partial pressure of a reaction byp does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Film forming method wherein a partial pressure of a reaction byp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film forming method wherein a partial pressure of a reaction byp will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2015063