Method for fabricating a read-only-memory (ROM) using a new ROM

Fishing – trapping – and vermin destroying

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437 45, 437239, H01L 218246

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active

055717390

ABSTRACT:
A method of manufacturing an improved Read-Only-Memory (ROM) device, was achieved. The array of programmed ROM cells composed of field effect transistors (FETs) are fabricated having improved bit lines with lower resistance. The method utilizes the selective deposition of silicon oxide by a method of Liquid Phase Deposition (LPD) to form a thick insulating oxide layer over the gate oxide of the FET in the coded memory cells. The thick insulating oxide raises the threshold voltage of the FET, preventing the FET from turning on when a gate voltage is applied. The coding using a thick insulating oxide eliminates the need to code the ROM memory cells by ion implantation, and thereby prevents the counter-doping of the bit lines which results in the high bit line resistivity that degrades circuit performance.

REFERENCES:
patent: 5117389 (1992-05-01), Yiu
patent: 5306657 (1994-04-01), Yang
patent: 5436185 (1995-07-01), Hsue et al.
patent: 5472898 (1995-12-01), Hong et al.
"A Selective SiO.sub.2 Film-Formation Technology Using Liquid. Phase Deposition for Fully Planarized Mutilevel Interconnections" by T. Homma et al. J Electro Chem Soc. vol. 140, No. 8, Aug. 1993 pp. 2410-2414.

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