Method of manufacturing a semiconducter device capable of easily

Details Method of manufacturing a semiconducter device capable of easily Method of manufacturing a semiconducter device capable of easily

1995-06-16

1996-11-05

Fourson, George

Fishing, trapping, and vermin destroying

437 46, 437193, 437200, H01L 21265

Patent

active

055717357

ABSTRACT:
In a method of manufacturing a semiconductor device, a step (d) of forming metal silicide films (20) on source and drain regions (17, 18) and on gate electrodes (71, 81) comprises selectively depositing silicon thin films (19) on the source and drain regions and the gate electrodes, the silicon thin films having impurity concentration less than 10.sup.19 cm.sup.-3 ; amorphizing the silicon thin films, the gate electrodes, and a silicon semiconductor substrate (11) by ion implantation; depositing a metal film on the silicon thin films, on the gate electrodes, and on the silicon semiconductor substrate; performing heat treatment of the metal film to form the metal silicide films (20) on the source and drain regions and the gate electrodes; and removing unreacted metal films (21) remaining on insulating films (16-1, 16-2). Preferably, the selectively depositing step may be performed by a chemical vapor deposition process of a reaction rate-determining mode by using disilane gas or silane gas.

REFERENCES:
patent: 5156994 (1992-10-01), Moslehi
patent: 5236872 (1993-08-01), Van Ommen et al.
patent: 5420074 (1995-05-01), Ohshimo
patent: 5432129 (1995-07-01), Hodges
Takahashi, M., et al., "Anomalous Resistance in 0.1 .mu.m-Region Ti-Silicided Poly Si Gate", Extended Abstracts of the 1993 Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 458-460.
Beyers, et al., "Titanium Disilicide Formation on Heavily Doped Silicon Substrates", J. Appl. Phys., vol. 61, No. 11, Jun. 1, 1987, pp. 5110-5117.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconducter device capable of easily does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconducter device capable of easily, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconducter device capable of easily will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2014626