Semiconductor memory which can store two or more bits of data in

Details Semiconductor memory which can store two or more bits of data in Semiconductor memory which can store two or more bits of data in

1998-07-14

2000-08-15

Elms, Richard

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 36518505, 36518511, G11C 1604

Patent

active

061046361

ABSTRACT:
In a semiconductor memory in which each memory cell is composed of a transistor having a floating gate between a control gate and a conducting channel formed between a drain and a source and in which storage of data is achieved on the principle that the threshold voltage of the transistor varies with the amount of electric charge accumulated in the floating gate, while a transistor constituting a memory cell from which data is read out is supplied with a predetermined current, the control gate and the drain of that transistor are kept short-circuited.

REFERENCES:
patent: 5289401 (1994-02-01), Shima
patent: 5694357 (1997-12-01), Mori
patent: 5781489 (1998-07-01), Okamoto
patent: 5847597 (1998-12-01), Ooishi et al.
patent: 5870218 (1999-02-01), Jyoumo et al.
patent: 5892714 (1999-04-01), Choi
patent: 5901089 (1999-05-01), Korsh et al.

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