Electroluminescent semiconductor device

Details Electroluminescent semiconductor device Electroluminescent semiconductor device

1989-09-29

1992-03-24

Davie, James W.

Electric lamp and discharge devices

With temperature modifier

For lead-in-seal or stem protection

313505, 357 40, 372 50, H01L 2702

Patent

active

050993011

ABSTRACT:
An electroluminescent semiconductor device in which the drain of a MOSFET acts as the driver for a manganese doped zinc sulfide electroluminescent layer. The zinc sulfide layer is coated with a layer of metal which prevents the emission of light from the electroluminescent layer except through an aperture extending through the metal layer. Alternatively, the aperture is omitted and laser emission is induced from a semi-reflective end plate positioned on a side of the electroluminescent layer.

REFERENCES:
patent: 4523189 (1985-06-01), Takahara et al.
patent: 4665342 (1987-05-01), Topp et al.
patent: 4935665 (1990-06-01), Murata

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