Magnetically sensitive semiconductor device

Details Magnetically sensitive semiconductor device Magnetically sensitive semiconductor device

1991-05-07

1992-03-24

James, Andrew J.

357 25, H01L 2722, H01L 2982, H01L 2966, H01L 2996

Patent

active

050992988

ABSTRACT:
A magnetically sensitive semiconductor includes an emitter electrode, at least three collector electrodes arranged substantially equidistantly from the emitter electrode and spaced apart substantially equidistantly in order to extract carriers outputted by the emitter electrode and migrating through a semiconductor, and first base electrodes for accelerating the carriers in the direction of the collector electrodes from the emitter electrode, the collector electrodes at both ends of the at least three collector electrodes serving as collector output electrodes. By virtue of such an arrangement, carriers unnecessary for field detection are eliminated to provide a magnetically sensitive semiconductor having excellent sensitivity.

REFERENCES:
patent: 3714559 (1973-01-01), Bate
patent: 4163986 (1979-08-01), Vinal
patent: 4700211 (1987-10-01), Popovic et al.
patent: 4929993 (1990-05-01), Popovic
patent: 4939563 (1990-07-01), Fang et al.
Ristic et al., "A Lateral Magnetotransistor Structure with a Linear Response to the Magnetic Field" IEEE Trans. On Elect. Dev., vol. 36, No. 6, Jun. 1989, pp. 1076-1085.
Freeman et al., "Semiconductor Magnetic Field Sensor", vol. 18(5) IBM Tech. Discl. Bull. (10/1975) pp. 1389-1390.
Popovic et al., "Magnetotransistor in CMOS Technology", IEEE Transactions on Electron Devices, vol. ED-33(9) (9/1986) pp. 1334-1335.

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